Title Silicon carbide and related materials 2014 : selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France / edited by Didier Chaussende and Gabriel Ferro

Published Switzerland : Trans Tech Publications, 2015 ©2015

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Description 1 online resource (1078 pages) : illustrations (some color) Series Materials science forum, 0255-5476 ; volumes 821-823 Materials science forum ; v. 821-823. Summary Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II. 1 Fundamental and Material Properties; II. 2 Point and Extended Defects; II. 3 Surfaces and Interfaces; III. SiC Processing; III. 1 Doping, Implantation and Contact; III. 2 Dielectric Growth and Characterization; III. 3 Etching and Machining; IV. SiC Devices; IV. 1 Diodes; IV. 2 Field Effect Transistors; IV. 3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science Notes This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface Online resource; title from HTML table of contents page (Scientific.Net viewed July 15, 2015) Subject Silicon carbide -- Congresses Silicon carbide -- Electric properties -- Congresses Silicon-carbide thin films -- Congresses Nitrides -- Congresses Graphene -- Congresses Crystal growth -- Congresses Wide gap semiconductors -- Materials -- Congresses Wide gap semiconductors -- Materials -- Technological innovations -- Congresses TECHNOLOGY & ENGINEERING -- Mechanical. TECHNOLOGY & ENGINEERING -- Engineering (General) TECHNOLOGY & ENGINEERING -- Reference. Silicon-carbide thin films Nitrides Graphene Crystal growth Silicon carbide Silicon carbide -- Electric properties Genre/Form Conference papers and proceedings Form Electronic book Author Chaussende, Didier, editor Ferro, Gabriel, editor. ISBN 9783038269434 3038269433

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