| Description |
1 online resource (xvi, 240 pages) : illustrations |
| Series |
NATO science series. Series II, Mathematics, physics and chemistry ; v. 194 |
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NATO science series. Series II, Mathematics, physics, and chemistry ; v. 194.
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| Contents |
Note continued: Valence band ordering and magneto-optical properties of free and bound excitons in ZnO / A.V. Rodina / M. Strassburg / M. Dworzak / U. Haboeck / A. Hoffmann / H.R. Alves / A. Zeuner / D.M. Hofmann / B.K. Meyer -- Fundamental optical spectra and electronic structure of Zno crystals / V. Val. Sobolev / V.V. Sobolev -- Photo-induced localized lattice vibrations in ZnO doped with 3d transition metal impurities / Alexey Kislov -- pt. V Device applications -- ZnO window layers for solar cells / Walther Fuhs -- ZnO/AlGaN ultraviolet light emitting diodes / E.V. Kalinina / A.E. Cherenkov / G.A. Onushkin / Ya. I. Alivov / D.C. Look / B.M. Ataev / A.K. Omaev / C.M. Chukichev -- ZnO transparent thin-film transistor device physics / J.F. Wager |
| Summary |
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications", held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV |
| Analysis |
Optoelectronic properties |
| Notes |
"Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectric Applications, St. Petersburg, Russia, 23-25 June 2004"--Title page verso |
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"Published in cooperation with NATO Public Diplomacy Division." |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Print version record |
| In |
Springer eBooks |
| Subject |
Zinc oxide -- Electric properties -- Congresses
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Zinc oxide -- Optical properties -- Congresses
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Physics.
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Physics
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physics.
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TECHNOLOGY & ENGINEERING -- Material Science.
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Zinc oxide -- Optical properties.
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Zinc oxide -- Electric properties.
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Physique.
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Physics
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| Genre/Form |
proceedings (reports)
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Conference papers and proceedings
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Conference papers and proceedings.
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Actes de congrès.
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| Form |
Electronic book
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| Author |
Nickel, Norbert H.
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Terukov, Evgenii.
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| LC no. |
2005534364 |
| ISBN |
9781402034756 |
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140203475X |
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1402034733 |
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9781402034732 |
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9781402034749 |
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1402034741 |
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6610412766 |
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9786610412761 |
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