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E-book
Author Hellings, Geert

Title High mobility and quantum well transistors : design and TCAD simulation / Geert Hellings, Kristin De Meyer
Published Dordrecht ; New York : Springer, ©2013

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Description 1 online resource
Series Springer series in advanced microelectronics, 1437-0387 ; v. 42
Springer series in advanced microelectronics ; v. 42.
Contents Introduction -- Source/Drain Junctions in Germanium: Experimental Investigation -- TCAD Simulation and Modeling of Ion Implants in Germanium -- Electrical TCAD Simulations and Modeling in Germanium -- Investigation of Quantum Well Transistors for Scaled Technologies -- Implant-Free Quantum Well FETs: Experimental Investigation -- Conclusions Future Work and Outlook
Summary For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes
Analysis Physics
Engineering
Systems engineering
Electronic Circuits and Devices
Circuits and Systems
Optical and Electronic Materials
Semiconductors
Nanotechnology and Microengineering
Bibliography Includes bibliographical references
Notes English
Subject Transistors -- Design and construction
Transistors -- Computer simulation
TECHNOLOGY & ENGINEERING -- Mechanical.
Ingénierie.
Electronics -- Materials
Electronic circuits
Nanotechnology
Optical materials
Physics
Semiconductors
Form Electronic book
Author Meyer, Kristin De.
ISBN 9789400763401
9400763409