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Author International Conference on Silicon Carbide and Related Materials (10th : 2014 : Grenoble, France )

Title Silicon carbide and related materials 2014 : selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France / edited by Didier Chaussende and Gabriel Ferro
Published Switzerland : Trans Tech Publications, 2015
Online access available from:
EBSCO eBook Academic Collection    View Resource Record  


Description 1 online resource (1078 pages) : illustrations (some color)
Series Materials science forum, 0255-5476 ; volumes 821-823
Materials science forum ; v. 821-823
Summary Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science
Notes This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface
Description based on online resource; title from HTML table of contents page (Scientific.Net viewed July 15, 2015)
Subject Crystal growth -- Congresses.
Graphene -- Congresses.
Nitrides -- Congresses.
Silicon carbide -- Congresses.
Silicon carbide -- Electric properties -- Congresses.
Silicon-carbide thin films -- Congresses.
Wide gap semiconductors -- Materials -- Congresses.
Wide gap semiconductors -- Materials -- Technological innovations -- Congresses.
Genre/Form Conference papers and proceedings.
Conference papers and proceedings.
Form Electronic book
Author Chaussende, Didier, editor
Ferro, Gabriel, editor
ISBN 3038269433 (electronic bk.)
9783038269434 (electronic bk.)