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E-book
Author Oda, Osamu

Title Compound semiconductor bulk materials and characterizations. Volume 2 / Osamu Oda
Published Singapore ; London : World Scientific, ©2012
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Description 1 online resource (xi, 396 pages) : illustrations
Series Compound semiconductor bulk materials and characterizations ; v. 2
Contents PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth
Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth; -- High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method; -- Flux method; -- Ammonothermal method; -- Other solution growth methods; (3) Vapor phase growth; -- Physical Vapor Transport (PVT) method; -- Reaction of Ga with NH3; -- Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE)
Sapphire- NdGa03 (NGO); -- GaAs; -SiC; -- Si; -- GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN; -- GaN; (2) Structural defects; -BN; -AIN; -- GaN; (3) Point defects; -BN; -AIN; -- GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN; -- GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN
20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method
21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. MERCURY COMPOUNDS; 22.1 INTRODUCTION
Summary Annotation This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Compound semiconductors -- Materials
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
Compound semiconductors -- Materials
Form Electronic book
ISBN 9789812835062
9812835067