| Description |
1 online resource (ix, 270 pages) : illustrations |
| Series |
Selected topics in electronics and systems ; v. 23 |
|
Selected topics in electronics and systems ; v. 23.
|
| Contents |
Oxide wearout, breakdown, and reliability / D.J. Dumin -- Reliability of flash nonvolatile memories / N. Mielke and J. Chen -- Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics / J.W. McPherson -- Breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides / J. Sune, D. Jimenez, and E. Miranda -- MOSFET gate oxide reliability: Anode hole injection model and its applications / Y.-C. Yeo, Q. Lu, and C. Hu |
| Summary |
Annotation This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field |
| Bibliography |
Includes bibliographical references |
| Notes |
Print version record |
| Subject |
Metal oxide semiconductors -- Reliability
|
|
Silicon oxide -- Deterioration
|
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COMPUTERS -- Machine Theory.
|
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COMPUTERS -- Computer Engineering.
|
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COMPUTERS -- Hardware -- General.
|
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Metal oxide semiconductors -- Reliability
|
| Form |
Electronic book
|
| Author |
Dumin, D. J.
|
| ISBN |
9789812778062 |
|
9812778063 |
|
9789810248420 |
|
9810248423 |
|
