Limit search to available items
Book Cover
E-book

Uniform Title Defects and diffusion in semiconductors (Annual retrospective XIV)
Title Defects and diffusion in semiconductors : an annual retrospective XIV / edited by D.J. Fisher
Published Durnten-Zurich : TTP, [2012]

Copies

Description 1 online resource (vii, 243 pages) : illustrations (black and white)
Series Defect and diffusion forum, 1012-0386 ; v. 332
Diffusion and defect data. Pt. A, Defect and diffusion forum ; v. 332.
Summary A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow
Notes Includes abstracts of papers published in scientific literature
Bibliography Includes bibliographical references and indexes
Notes Print version record
Subject Semiconductors -- Defects.
Semiconductors -- Diffusion.
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
Semiconductors -- Defects
Semiconductors -- Diffusion
Form Electronic book
Author Fisher, D. J., editor
ISBN 9783038139867
3038139866
Other Titles Defects and diffusion in semiconductors XIV