| Description |
1 online resource (xvi, 355 pages) |
| Series |
Topics in applied physics ; v. 124 |
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Topics in applied physics ; . 124.
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| Contents |
Note continued: 3.5.2. Dependence on the Implantation Geometry -- 3.5.3. Dependence on the Implantation Temperature -- 3.5.4. Co-Implantation of RE and O or Other Impurity -- 3.6. Effect of Sample Mosaicity on Determining the Lattice Sites: AIN vs. GaN -- 3.7. Conclusions -- Acknowledgements -- References -- 4. Electroluminescent Devices Using RE-Doped III-Nitrides / Akihiro Wakahara -- 4.1. Introduction -- 4.2. General Treatment of EL devices -- 4.3. III-N:RE EL Devices -- 4.4. Light Emitting Diode with RE-doped GaN Active Layer -- 4.5. Summary -- References -- 5. Er-Doped GaN and InxGa1-xN for Optical Communications / J.M. Zavada -- 5.1. Introduction -- 5.2. Er Doping of GaN and InGaN by Ion Implantation -- 5.3. In Situ Er Doping of GaN by MBE and HYPE -- 5.4. MOCVD Growth of Er-Doped III-Nitrides -- 5.4.1. Er-Doped GaN -- 5.4.2. Er-Doped InGaN -- 5.5. Current-Injected 1.54 mu LEDs Based on GaN:Er -- 5.6. Er-Doped Nitride Amplifier (EDNA) Development -- 5.7. Summary -- Acknowledgements -- References -- 6. Rare-Earth-Doped GaN Quantum Dots / B. Daudin -- 6.1. Introduction -- 6.2. Growth of FaN QDs -- 6.2.1. Undoped Dots -- 6.2.2. Rare-Earth-Doped Dots -- 6.3. Optical Properties -- 6.3.1. Eu-Doped GaN QDs Embedded in AIN -- 6.3.2. Eu-Doped InGaN QDs Embedded in GaN -- 6.3.3. Tm-Doped Dots -- 6.3.4. Tb-Doped GaN QDs -- 6.3.5. Photoluminescence Dynamics of RE-Doped GaN QDs -- 6.4. Electroluminescence of Rare Earth-Doped GaN QDs -- 6.5. Conclusion -- Acknowlegements -- References -- 7. Visble Luminescent RE-doped GaN, AIGaN and AllnN / Robert Martin -- 7.1. Introduction to Luminescence of RE-Doped GaN -- 7.2. Preparation of Samples -- 7.3. Cathodoluminescence and X-Ray Microanalysis -- 7.4. Annealing Temperature Dependence of RE Luminescence |
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Note continued: 7.5. Site Multiplicity in GaN:Eu Revealed by Photoluminescence Spectroscopy -- 7.6. Luminescence of Eu Ions in AlGaN across the Entire Alloy Composition Range -- 7.7. Luminescence of RE Ions in AllnN Hosts -- 7.8. Conclusion -- Ackowledgements -- References -- 8. Combined Excitation Emission Speectroscopy (CEES) of RE Ions in Gallium Nitride / Volkmar Dierolf -- 8.1. Introduction -- 8.1.1. RE Ions in GaN: General Considerations -- 8.1.2. CEES Experimental Setup -- 8.2. Application of CEES to Erbium in GaN -- 8.2.1. Introduction -- 8.2.2. Direct Excitation of 1.5 um Emission -- 8.2.3. Two-Step Excitation of 980 nm and 820 nm Emission -- 8.2.4. Three-Step Excitation of 670 nm and 550 nm Emission -- 8.2.5. Direct Excitation of 670 nm and 550 nm Emission -- 8.2.6. Comparison of in situ Doped MBE and MOCVD Grown GaN: Er Samples -- 8.2.7. Above Bandgap Excitation of 1.5 um Emission -- 8.2.8. Summary of CEES Spectroscopy of GaN:Er -- 8.3. Application of CEES to Neodymium in GaN -- 8.3.1. Introduction and Experimental Background -- 8.3.2. Assignment of Excitation and Emission Peaks -- 8.3.3. Electron-Phonon Coupling -- 8.3.4. Inhomogeneous Broadening: Spectral and Spatial Aspects -- 8.3.5. Summary of CEES of GaN:Nd -- 8.4. Application of CEES to Europium in GaN and AlGaN -- 8.4.1. Introduction -- 8.4.2. Energietic Fingerprints of Different Sites -- 8.4.3. Electron Phonon Coupling -- 8.4.4. Effect of Growth Conditions -- 8.4.5. Excitation under Non-Resonant Conditions -- 8.4.6. Summary -- 8.5. Conclusion -- Acknowledgements -- References -- 9. Excitation Mechanisms of RE Ions in Semiconductors / Alain Braud -- 9.1. Introduction -- 9.2. Excitation Mechanisms -- 9.2.1. Excitation Paths Involving Electron-Hole Pairs -- 9.2.2. Excitation Paths Involving Change of RE Ion Charge |
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Note continued: 9.2.3. Excitation Paths Involving Donor-Acceptor Pairs -- 9.2.4. Energy Transfer Processes -- 9.3. RE Excitation Processes in GaN -- 9.3.1. RE Excitation Schemes -- 9.3.2. Isolated RE Ions Versus RE Ions Coupled to Carrer Traps -- 9.3.3. Effective Excitation Cross-Section -- 9.3.4. RE-Related Carrier Trap -- 9.4. Conclusion -- Acknowledgements -- References -- 10. High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd / V. Sapega -- 10.1. Introduction -- 10.2. Experimental -- 10.2.1. Sample Growth and Structural Characterization -- 10.2.2. Assessment of Electrical and Magnetic Properties -- 10.2.3. Assessment of Optical Properties -- 10.3. Basic Structural and Magnetic Properties -- 10.3.1. Gd Incorporation in GaN -- 10.3.2. Magnetic Characteristics -- 10.4. Phenomenological Model -- 10.5. Optical Properties -- 10.6. Magnetic Phases and Anisotropy -- 10.6.1. Magnetic Phases -- 10.6.2. Magnetic Anisotropy -- 10.6.3. Discussion -- 10.7. Recent Studies in the Literature -- 10.8. Conclusions -- Acknowledgements -- References -- 11. Summary and Prospects for Future Work -- References |
| Summary |
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. Improved theoretical understanding of the behaviour of f-electrons in solids, driven by accelerating computational capability, has coincided with an improved ability of crystal growers to incorporate rare earth elements reproducibly in wide bandgap semiconductor hosts that are favoured for optoelectronic and spintronic applications. The device possibilities of these advanced materials are promising but by no means well-develo |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Print version record |
| In |
Springer eBooks |
| Subject |
Rare earth nitrates.
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SCIENCE -- Chemistry -- Inorganic.
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Physique.
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Rare earth nitrates
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| Form |
Electronic book
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| Author |
O'Donnell, Kevin
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Dierolf, Volkmar, 1960-
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| ISBN |
9789048128778 |
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9048128773 |
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9048128765 |
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9789048128761 |
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