Title Modern power electronic devices physics, applications, and reliability edited by Francesco Iannuzzo

Published Stevenage, United Kingdom The Institution of Engineering and Technology 2020 ©2020

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Description 1 online resource (xx, 481 pages) illustrations Series IET energy engineering series 152 IET energy engineering series ; 152. Contents Introduction : power electronics challenges -- Junction diodes / Lin Liang -- Thyristors / Jan Vobecky -- Silicon MOSFETs / Gerald Deboy -- Silicon IGBTs / Munaf Rahimo and Paula Díaz Reigosa -- IGCTs / Eric Carroll -- Silicon carbide diods / Jens Peter Konrath -- SiC MOSFETs / Luca Maresca, Alessandro Borghese, Gianpaolo Romano, Asad Fayyaz, Michele Riccio, Giovanni Breglio, Alberto Castellazzi and Andrea Irace -- GaN metal-insulator-semiconductor field-effect transistors / Shu Yang and Shaowen Han -- Gallium nitride transistors : applications and vertical solutions / Giorgia Longobardi -- Module design and reliability / Daohui Li, Xiaoping Dai and Guoyou Liu -- Switching cell design / Eckart Hoene and Kirill Klein -- Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability / Haoze Luo, Wuhua Li and Francesco Iannuzzo -- Prospects and outlooks in power electronics technology and market / Elena Barbarini Summary The book contains 14 chapters. The following topics are dealt with: Power Electronics challenges; Junction diodes; Thyristors; Silicon MOSFETs; Silicon IGBTs; IGCTs; Silicon carbide diodes; SiC MOSFETs; GaN metal-insulator-semiconductor field-effect transistors; Gallium nitride transistors: applications and vertical solutions; Module design and reliability; Switching cell design; Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability; and Prospects and outlooks in power electronics technology and market Analysis junction diodes thyristors silicon MOSFET silicon IGBT IGCT silicon carbide diodes metal-insulator-semiconductor field-effect transistors gallium nitride transistors module design module reliability switching cell design insulated gate bipolar transistor IGBT gate driving methods IGBT robustness IGBT reliability power electronics technology power electronics market Si SiC GaN Bibliography Includes bibliographical references and index (pages 469-481) Notes Print version record Subject Power electronics. Diodes. Metal oxide semiconductor field-effect transistors. Electric resistance. Gallium compounds. Insulated gate bipolar transistors. Logic design. Semiconductors. Silicon. Silicon compounds. Thyristors. Wide gap semiconductors. Electric Impedance Semiconductors Silicon Silicon Compounds resistivity. semiconductor. silicon. Power electronics Metal oxide semiconductor field-effect transistors Diodes Electric resistance Gallium compounds Insulated gate bipolar transistors Logic design Semiconductors Silicon Silicon compounds Thyristors Wide gap semiconductors circuit reliability elemental semiconductors gallium compounds III-V semiconductors insulated gate bipolar transistors network synthesis power MOSFET power semiconductor diodes silicon silicon compounds thyristors wide band gap semiconductors Form Electronic book Author Iannuzzo, Francesco editor ISBN 1785619187 9781785619182

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