| Description |
1 online resource (xxxiii, 385 pages) : illustrations |
| Series |
Springer tracts in modern physics, 1615-0430 ; volume 255 |
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Springer tracts in modern physics ; 255. 0081-3869
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| Contents |
Part I. Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors -- The DSL in Quantum Wells of Non-Parabolic Semiconductors -- The DSL in NIPI Structures of Non-Parabolic Semiconductors -- The DSL in Inversion Layers of Non-Parabolic Semiconductors -- Part II. Influence of Light Waves on the DSL in Opto-Electronic Semiconductors -- The DSL for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation -- The DSL for Ultra-Thin Films of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation -- The Opto-DSL in III-V, Ternary and Quaternary Semiconductors Under Magnetic Quantization -- The Opto-DSL of III-V, Ternary and Quaternary Semiconductors Under Cross-Fields Configuration -- Part III. Influence of Intense Electric Field on the DSL in Opto-Electronic Semiconductors -- The DSL for III-V, Ternary and Quaternary Semiconductors Intense Electric Field -- Suggestion for Experimental Determinations of 2D and 3D DSLs and Few Related Applications -- Conclusion and Scope for Future Research -- Part IV. Appendices -- DSL in Bulk Specimens of Non-Parabolic Materials -- DSL in Non-Parabolic Semiconductors Under Magnetic Quantization -- DSL in Compound Semiconductors and Their Nano-Structures Under Cross-Fields Configuration -- DSL in Heavily Doped Compound Semiconductors -- DSL in Super-Lattices of Heavily Doped Non-Parabolic Semiconductors Under Magnetic Quantization |
| Summary |
This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures |
| Bibliography |
Includes bibliographical references and indexes |
| Notes |
English |
|
Online resource; title from PDF title page (SpringerLink, viewed November 11, 2013) |
| Subject |
Nanostructured materials.
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Semiconductors -- Testing -- Optical methods.
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Thomas-Fermi theory.
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Nanostructures
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Physique.
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Astronomie.
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Nanostructured materials
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Semiconductors -- Testing -- Optical methods
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Thomas-Fermi theory
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| Form |
Electronic book
|
| Author |
Bhattacharya, Sitangshu, author.
|
| ISBN |
9783319013398 |
|
3319013394 |
|
