Does the Cooling of Electronics Increase Reliability?; Temperature Dependence of Microelectronic Package Failure Mechanisms; Temperature Dependencies of Failure Mechanisms in the Die Metallization; Effect of Hydrogen (H2) and Helium (He) Ambients On Metallization Versus Temperature; Temperature Dependencies of Failure Mechanisms in the Device Oxide; Temperature Dependencies of Failure Mechanisms in the Device; Temperature Dependencies of Failure Mechanisms in the Device Oxide Interface; Temperature Dependence of Microelectronic Package Failure Mechanisms; Temperature Dependencies of Failure Mechanisms in the Die and Die/Substrate Attach; Temperature Dependencies of Failure Mechanisms in First-Level Interconnections; Temperature Dependencies of Failure Mechanisms in the Package Case; Electrical Parameter Variations in Bipolar Devices; Introduction; Temperature Dependence of Bipolar Junction Transistor Parameters; Electrical Parameter Variations in Mosfet Devices; Temperature Dependence of Mosfet Parameters; A Physics-of-Failure Approach to IC Burn-In; Introduction; Burn-In Philosophy; Problems with Present Approach to Burn-In; A Physics-of-Failure Approach to Burn-In; Derating Guidelines for Temperature-Tolerant Design of Microelectronic Devices; Introduction; Problems with the Present Approach to Device Derating; A Physics-of-Failure Approach to Device Derating; Derating for Failure Mechanisms in Die Metallization; Derating Guidelines for Temperature-Tolerant Design of Electronic Packages; Derating for Failure Mechanisms in the Die and Die/Substrate Attach; Derating for Failure Mechanisms in the First-Level Interconnects; Derating for Failure Mechanisms in the Package Case; A Guide for Steady State Temperature Effects
