| Description |
1 online resource (380 pages) |
| Contents |
Title Page ; Copyright; Contents; About the Editors; List of Contributors ; Series Editor's Foreword ; Preface; Acknowledgments; Chapter 1 Introduction; 1.1 Overview of this Book; 1.2 Background; 1.2.1 Typical Characteristics of CAAC-IGZO FETs; 1.2.2 Possible Applications of CAAC-IGZO FETs; 1.3 Summary of Each Chapter; References; Chapter 2 Device Physics of CAAC-IGZO FET ; 2.1 Introduction; 2.2 Off-State Current; 2.2.1 Off-State Current Comparison between Si and CAAC-IGZO FETs; 2.2.2 Measurement of Extremely Low Off-State Current; 2.2.3 Theoretical Discussion with Energy Band Diagram |
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2.2.4 Conclusion2.3 Subthreshold Characteristics; 2.3.1 Estimation of Icut by SS; 2.3.2 Extraction Method of Interface Levels; 2.3.3 Reproduction of Measured Value and Estimation of Icut; 2.3.4 Conclusion; 2.4 Technique for Controlling Threshold Voltage (Vth); 2.4.1 Vth Control by Application of Back-Gate Bias; 2.4.2 Vth Control by Formation of Circuit for Retaining Back-Gate Bias; 2.4.3 Vth Control by Charge Injection into the Charge Trap Layer; 2.4.4 Conclusion; 2.5 On-State Characteristics; 2.5.1 Channel-Length Dependence of Field-Effect Mobility; 2.5.2 Measurement of Cut-off Frequency |
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2.5.3 Summary2.6 Short-Channel Effect; 2.6.1 Features of S-ch CAAC-IGZO FETs; 2.6.2 Effect of S-ch Structure; 2.6.3 Intrinsic Accumulation-Mode Device; 2.6.4 Dielectric Anisotropy; 2.6.5 Numerical Calculation of the Band Diagrams in IGZO FETs; 2.6.6 Summary; 2.7 20-nm-Node CAAC-IGZO FET; 2.7.1 TGSA CAAC-IGZO FET; 2.7.2 Device Characteristics; 2.7.3 Memory-Retention Characteristics; 2.7.4 Summary; 2.8 Hybrid Structure; 2.8.1 TGTC Structure; 2.8.2 TGSA Structure; 2.8.3 Hybrid Structure; Appendix: Comparison between CAAC-IGZO and Si; References; Chapter 3 NOSRAM ; 3.1 Introduction |
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3.2 Memory Characteristics3.3 Application of CAAC-IGZO FETs to Memory and their Operation; 3.4 Configuration and Operation of NOSRAM Module; 3.4.1 NOSRAM Module; 3.4.2 Setting Operational Voltage of NOSRAM Module; 3.4.3 Operation of NOSRAM Module; 3.5 Multilevel NOSRAM; 3.5.1 4-Level (2 Bits/Cell) NOSRAM Module; 3.5.2 8-Level (3 Bits/Cell) NOSRAM Module; 3.5.3 16-Level (4 Bits/Cell) NOSRAM Module; 3.5.4 Stacked Multilevel NOSRAM; 3.6 Prototype and Characterization; 3.6.1 2-Level NOSRAM; 3.6.2 4-Level NOSRAM; 3.6.3 8-Level NOSRAM; 3.6.4 16-Level NOSRAM; 3.6.5 Comparison of Prototypes |
| Summary |
Describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs |
| Bibliography |
ReferencesChapter 4 DOSRAM; 4.1 Introduction; 4.2 Characteristics and Problems of DRAM; 4.3 Operations and Characteristics of DOSRAM Memory Cell; 4.4 Configuration and Basic Operation of DOSRAM; 4.4.1 Circuit Configuration and Operation of DOSRAM; 4.4.2 Hybrid Structure of DOSRAM; 4.5 Operation of Sense Amplifier; 4.5.1 Writing Operation; 4.5.2 Reading Operation; 4.6 Characteristic Measurement; 4.6.1 Writing Characteristics; 4.6.2 Reading Characteristics; 4.6.3 Data-Retention Characteristics; 4.6.4 Summary of 8-kbit DOSRAM; 4.7 Prototype DOSRAM Using 60-nm Technology Node |
| Notes |
4.7.1 Configuration of Prototype |
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Print version record |
| Subject |
Semiconductors -- Materials
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Semiconductors -- Characterization.
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Gallium compounds.
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Zinc compounds.
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Oxides.
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Integrated circuits -- Large scale integration -- Materials
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Zinc Compounds
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Oxides
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TECHNOLOGY & ENGINEERING -- Mechanical.
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Gallium compounds
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Oxides
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Semiconductors -- Characterization
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Semiconductors -- Materials
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Zinc compounds
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| Form |
Electronic book
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| Author |
Yamazaki, Shunpei, editor
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Fujita, Masahiro
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| ISBN |
9781119247425 |
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111924742X |
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9781119247432 |
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1119247438 |
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