| Description |
xxii, 740 pages : illustrations ; 25 cm |
| Contents |
Machine derived contents note: Preface. -- Preface to the First Edition. -- Introduction. -- Diodes I: Rectifiers. -- p-n Junction Diode. -- p-i-n Diode. -- Schottky-Barrier Diode. -- Planar-Doped-Barrier (PDB) Diode. -- Isotype Heterojunction. -- Diodes Ii: Negative Resistance N-Shaped. -- Tunnel Diode. -- Transferred-Electron Device (TED). -- Resonant-Tunneling Diode. -- Resonant-Interband-Tunneling (RIT) Diode. -- Single-Barrier Tunnel Diode. -- Single-Barrier Tunnel Diode. -- Single-Barrier Interband-Tunneling Diode. -- Real-Space-Transfer (RST) Diode. -- Diodes Iii: Negative Resistance S-Shaped. -- Metal-Insulator-Semiconductor Switch (MISS). -- Planar-Doped-Barrier (PDB) Switch. -- Amorphous Threshold Switch. -- Heterostructure Hot-Electron Diode (HHED). -- Diodes Iv: Negative Resistance Transit-Time. -- Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode. -- Barrier-Injection Transit-Time (BARITT) Diode. -- Resistive And Capacitive Devices. -- Resistor. -- Metal-Oxide-Semiconductor (MOS) Capacitor. -- Charge-Coupled Device (CCD). -- Transistors I: Field-Effect. -- Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). -- Junction Field-Effect Transistor (JFET). -- Metal-Semiconductor Field-Effect Transistor (MESFET). -- Modulation-Doped Field-Effect Transistor (MODFET). -- Permeable-Base Transistor. -- Static-Induction Transistor (SIT). -- Real-Space-Transfer (RST) Transistor. -- Planar-Doped Field-Effect Transistor. -- Surface-Tunnel Transistor. -- Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET). -- Stark-Effect Transistor. -- Velocity-Modulation Transistor (VMT). -- Transistor Ii: Potential-Effect. -- Bipolar Transistor. -- Tunneling Hot-Electron-Transfer Amplifier (THETA). -- Metal-Base Transistor. -- Bipolar Inversion-Channel Field-Effect Transistor (BICFET). -- Tunnel-Emitter Transistor (TETRAN). -- Planar-Doped-Barrier (PDB) Transistor. -- Heterojunction Hot-Electron Transistor (HHET). -- Induced-Base Transistor. -- Resonant-Tunneling Bipolar Transistor (RTBT/RBT). -- Resonant-Tunneling Hot-Electron Transistor (RHET). -- Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT). -- Spin-Valve Transistor. -- Nonvolatile Memories. -- Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor. -- Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor. -- Thyristors And Power Devices. -- Silicon-Controlled Rectifier (SCR). -- Insulated-Gate Bipolar Transistor (IGBT). -- Static-Induction Thyristor (SIThy). -- Unijunction Transistor. -- Photonics I: Light Sources. -- Light-Emitting Diode (LED). -- Injection Laser. -- Photonics Ii: Photodetectors. -- Photoconductor. -- p-i-n Photodiode. -- Schottky-Barrier Photodiode. -- Charge-Coupled Image Sensor (CCIS). -- Avalanche Photodiode (APD). -- Phototransistor. -- Metal-Smiconductor-Metal (MSM) Photodetector. -- Quantum-Well Infrared Photodetector (QWIP). -- Quantum-Dot Infrared Photodetector (QDIP). -- Blocked-Impurity-Band (BIB) Photodetector. -- Negative-Electron-Affinity (NEA) Photocathode. -- Photon-Drag Detector. -- Photonics Iii: Bistable Optical Devices. -- Self-Electrooptic-Effect Device (SEED). -- Bistable Etalon. -- Photonics Iv: Other Devices. -- Solar Cell. -- Electroabsorption Modulator. -- Thermistor. -- Hall Plate. -- Strain Gauge (Gage). -- Interdigital Transducer (IDT). -- Ion-Sensitive Field-Effect Transistor (ISFET). -- Appendix A: Selected Nonsemiconductor Devices. -- Appendix B: Physical Phenomena. -- Appendix C: General Applications of Device Groups. -- Appendix D: Physical Properties. -- Appendix E: Background Information. -- Index |
| Notes |
Previous ed.: 1995 |
| Bibliography |
Includes bibliographical references and index |
| Subject |
Semiconductors -- Handbooks, manuals, etc.
|
|
Semiconductors -- History.
|
| Genre/Form |
Handbooks and manuals.
|
| LC no. |
2002511943 |
| ISBN |
0471202401 alkaline paper |
|
