| Description |
1 online resource (642 pages) |
| Series |
IEEE Press Series on Microelectronic Systems ; v. 12 |
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IEEE Press series on microelectronic systems.
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| Contents |
RELIABILITY WEAROUT MECHANISMS IN ADVANCED CMOS TECHNOLOGIES; CONTENTS; Preface; 1 INTRODUCTION; 1.1 Book Philosophy; 1.2 Lifetime and Acceleration Concepts; 1.2.1 Reliability Purpose; 1.2.2 Accelerated Life; 1.2.3 Accelerating Condition; 1.3 Mechanism Types; 1.3.1 Parametric or Deterministic Mechanisms; 1.3.2 Structural Mechanisms; 1.3.3 Statistical Mechanisms; 1.3.4 Infant Defects; 1.3.5 Operating Life Defects; 1.3.6 Wearout; 1.4 Reliability Statistics; 1.4.1 Introduction; 1.4.2 Assumptions; 1.4.3 Sampling and Variability; 1.4.4 Criteria, Censoring, and Plotting Points |
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1.4.5 Definitions (Normal)1.4.6 Exponential Distribution; 1.4.7 Smallest Extreme Value and Weibull Distributions; 1.4.8 Lognormal Distribution; 1.4.9 Poisson Distribution; 1.5 Chi-Square and Student t Distributions; 1.5.1 Gamma and Chi-Square Distributions; 1.5.2 Student t Distribution; 1.6 Application; 1.6.1 Readouts Versus ""Exact"" Time-To-Fail; 1.6.2 Additional Types of Censoring; 1.6.3 Least-Squares Fit and Application; 1.6.4 Chi-Square Goodness of Fit Application; 1.6.5 Maximum Likelihood Estimation (MLE); 1.6.6 Closure; References |
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2 DIELECTRIC CHARACTERIZATION AND RELIABILITY METHODOLOGY2.1 Introduction; 2.1.1 Application and Fabrication of Silicon Dioxide-Based Dielectrics; 2.1.2 Failure Modes of Gate Oxide and Reliability Requirements; 2.1.3 Impact of Oxide Scaling; 2.2 Fundamentals of Insulator Physics and Characterization; 2.2.1 Capacitance-Voltage Characteristics; 2.2.2 Carrier Tunnelling and Injection Mechanisms in MOS Structures; 2.2.3 Oxide Voltage (Field) and Electron Energy at Anode; 2.2.4 Determination of Oxide Thickness; 2.3 Measurement of Dielectric Reliability; 2.3.1 Measurement Methods |
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2.3.2 Designs of Stress and Test Structures2.3.3 Physical Observations of Dielectric Breakdown; 2.3.4 Considerations for Oxide Breakdown Detection; 2.4 Fundamentals of Dielectric Breakdown Statistics; 2.4.1 Weibull Function and Poisson Statistics; 2.4.2 Area Transformation; 2.4.3 Weibull Versus Lognormal Failure Distributions; 2.4.4 Estimation of Weibull Parameters; 2.4.5 Methods for Determination of the Weibull Shape Factor (Slope); 2.4.6 Modeling Bi- or Multimodal Weibull Distributions; 2.5 Summary and Future Trends; References; 3 DIELECTRIC BREAKDOWN OF GATE OXIDES: PHYSICS AND EXPERIMENTS |
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3.1 Introduction3.2 Physics of Degradation and Breakdown; 3.2.1 Oxide Degradation; 3.2.2 The Role of Electric Field and Carrier Energy in the Degradation and Breakdown of Gate Oxides; 3.2.3 Percolation Model for the Breakdown Statistics; 3.2.4 Three-Dimensional Analytic Model for Oxide Breakdown Statistics; 3.2.5 Thickness Dependence of Oxide Breakdown; 3.3 Physical Models for Oxide Degradation and Breakdown; 3.3.1 The Thermochemical Model; 3.3.2 Hole-Induced Breakdown Models; 3.3.3 Anode Hydrogen Release Model; 3.4 Experimental Results of Oxide Breakdown; 3.4.1 Voltage Dependence |
| Summary |
A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias |
| Notes |
3.4.2 Temperature Dependence |
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English |
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Print version record |
| Subject |
Metal oxide semiconductors, Complementary -- Reliability
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Metal oxide semiconductors, Complementary -- Reliability
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| Form |
Electronic book
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| Author |
Wu, Ernest Y
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Vollertsen, Rolf-Peter
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Sune, Jordi
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La Rosa, Giuseppe
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Sullivan, Timothy D
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Rauch, Stewart E
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| ISBN |
0471731722 |
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9780471731726 |
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