| Description |
xxii, 469 pages : illustrations ; 26 cm |
| Contents |
Physical Constants and Unit Conversions -- 1. Introduction -- 2. Basic Device Physics -- 3. MOSFET Devices -- 4. CMOS Device Design -- 5. CMOS Performance Factors -- 6. Bipolar Devices -- 7. Bipolar Device Design -- 8. Bipolar Performance Factors -- App. 1. CMOS Process Flow -- App. 2. Outline of a Process for Fabricating Modern n-p-n Bipolar Transistors -- App. 3. Effective Density of States -- App. 4. Einstein Relations -- App. 5. Electron-Initiated and Hole-Initiated Avalanche Breakdown -- App. 6. An Analytical Solution for the Short-Channel Effect in Subthreshold -- App. 7. Quantum-Mechanical Solution in Weak Inversion -- App. 8. Determination of Emitter and Base Series Resistances -- App. 9. Intrinsic-Base Resistance |
| Summary |
The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry |
| Bibliography |
Includes bibliographical references and index |
| Subject |
Bipolar transistors.
|
|
Integrated circuits -- Very large scale integration.
|
|
Metal oxide semiconductors, Complementary.
|
| Author |
Ning, Tak H., 1943-
|
| LC no. |
98016162 |
| ISBN |
0521550564 |
|
0521559596 (paperback) |
|
