Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors Held in St Petersburg, Russia, 23-27 September 1996
Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- International Symposium on Compound Semiconductors Award and Heinrich Welker Gold Medal -- Young Scientist Award -- Preface -- Sponsors -- Symposium Committees -- Contents -- Chapter 1: Plenary Papers -- The semiconductor heterostructures: history and future trends -- Criteria for the growth of III-nitrides for blue-green emitting devices -- Wide bandgap semiconductors. Good results and great expectations -- Chapter 2: Nanoelectronics and Nanophotonics
Potential utility of nanoscale semiconductor heterostructures from the perspective of telecommunication and information technology -- Optoelectronic 2-D MESFET -- Emerging heterodimensional electronics for ultra low power applications -- Application of controllable crack formation for nanoelectronic device elements fabrication -- 200 GHz distributed InGaAs metal-semiconductor-metal photodetectors for the long-wavelength regime -- Hot holes in strained MQW InGaAs/GaAs and Ge/GeSi heterostructures
The resonance behaviour of AC impedance of one-barrier and two-barrier semiconductor tunnel structures -- Strain-related excitonic in-plane optical anisotropy in (100) InGaAs/InAIAs/InP MQWs -- Influence of refractive index contrast on photonic bandgap in 3D periodic SiO2 matrices filled with a semiconductor -- Carrier transport processes in RTS with type-II heterojunctions -- 6H-SiC natural diffusion nanostructures -- Self-consistent field approach to the study of potential in quantum wires
Ultra-high frequency operation of a mesoscopic field effect transistor with one-dimensional quantum ballistic channel -- Microwave modulated reflectance as a method of novel modulation spectroscopy of semiconductor heterostructures -- Characterization of Esaki-Tsu superlattices using X-ray and transport investigations -- Electron phase transitions and ordered states engineering in multiple quantum wells -- Two-dimensional electron systems in oriented curved surfaces -- Current-carrying magnetic states engineering by non-monotonic potential profile
Transport properties of AIAs/GaAs multilayer structures grown on (311)A GaAs substrates -- Growth-induced self-organization of composition-modulated structures in InGaAsP alloys -- The DX-centre assisted quenching of persistent photoconductivity by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures -- Acoustic-optic effects of surface acoustic waves in semiconductor quantum well structures -- Optical properties of InAIAs/InP type-II heterostructures grown on (111)B InP substrates -- Far-IR impurities photoconductivity in strained MQW Ge/GeSi heterostructures
Notes
Description based upon print version of record
New effects due to local illumination of semiconductor heterostructures with two-dimensional electron gas
