| Description |
1 online resource (xviii, 126 pages) : illustrations (some color) |
| Series |
Springer theses |
|
Springer theses.
|
| Contents |
Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook |
| Summary |
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications |
| Notes |
"Doctoral thesis accepted by Chinese Academy of Sciences, China." |
| Bibliography |
Includes bibliographical references |
| Notes |
English |
|
Online resource; title from PDF title page (SpringerLink, viewed January 21, 2016) |
| Subject |
Terahertz technology.
|
|
TECHNOLOGY & ENGINEERING -- Mechanical.
|
|
Terahertz technology
|
| Form |
Electronic book
|
| ISBN |
9783662486818 |
|
3662486814 |
|
