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Book Cover
E-book
Author Kasper, Erich

Title Silicon quantum integrated circuits : silicon-germanium heterostructure devices : basics and realisations / E. Kasper, D.J. Paul
Published Berlin ; New York : Springer, ©2005

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Description 1 online resource (xii, 360 pages) : illustrations
Series Nanoscience and technology, 1434-4904
Nanoscience and technology. 1434-4904
Contents Cover -- Title Page -- Preface -- Table of Contents -- 1. Introduction -- 1.1 Microelectronics and Optoelectronics -- 1.2 From Microelectronics to Nanoelectronics -- 1.3 Self ... ordering -- 1.4 Further Reading -- 2. Material Science -- 2.1 Growth and Preparation Methods (MBE, CVD, Implantation, Annealing) -- 2.2 Segregation and Diffusion of Dopants and Alloy Materials -- 2.3 Lattice Mismatch and its Implication on Critical Thickness and Interface Structure -- 2.4 Virtual Substrates and Strain Relaxation -- 2.5 Further Reading -- 3. Resumâe of Semiconductor Physics -- 3.1 Quantum Mechanics -- 3.2 The Band Structure of Semiconductors -- 3.3 The Concentration of Carriers in a Semiconductor -- 3.4 Electronic Transport in a Semiconductor -- 3.5 Low Dimensional Physics: Quantum Wires and Dots -- 3.6 Lattice Vibrations and Phonons -- 3.7 Optical Properties of Semiconductors -- 3.8 The Continuity Equations Including Recombination and Generation -- 3.9 Further Reading -- 4. Realisation of Potential Barriers -- 4.1 Depletion layer and built in voltage -- 4.2 d-Doping and n-i-p-i Structures -- 4.3 Heterointerfaces (type I, type II), Abruptness and Height of Barriers -- 4.4 Influence of Strain on Bandstructure -- 4.5 Band Alignment of Strained SiGe -- 4.6 Further Reading -- 5. Electronic Device Principles -- 5.1 The p-n Junction -- 5.2 The Silicon Bipolar Transistor -- 5.3 Metal Oxide Semiconductor Field Effect Transistors MOSFETs -- 5.4 Further Reading -- 6. Heterostructure Bipolar Transistors -- HBTs -- 6.1 Trade-off between current gain and speed -- 6.2 The High Speed SiGe HBT -- 6.3 The Linear Graded Profile -- 6.4 SiGe HBT Device Performance -- 6.5 Further Reading -- 7. Hetero Field Effect Transistors (HFETs) -- 7.1 Vertical Heterojunction MOSFETs -- 7.2 Strained-Si CMOS -- 7.3 Metal-Gated MOSFETs -- 7.4 Modulation Doped Field Effect Transistors (MODFETs) -- 7.5 Further Reading -- 8. Tunneling Phenomena -- 8.1 Tunnel Diodes -- 8.2 Resonant Tunnelling -- 8.3 Real Space Transfer (RST) Devices -- 8.4 Single Electron Transistors and Coulomb Blockade -- 8.5 Further Reading -- 9. Optoelectronics -- 9.1 Photonic Devices -- 9.2 The Quantum Cascade Laser -- 9.3 Further Reading -- 10. Integration -- 10.1 The CMOS Inverter and MOS Memory Circuits -- 10.2 Silicon Process Technology -- 10.3 CMOS -- 10.4 Heterolayer Integration Issues -- 10.5 Bipolar and HBT Fabrication Processes -- 10.6 BiCMOS -- 10.7 Strained-Si CMOS -- 10.8 The System on a Chip -- 10.9 Fault Tolerant Architectures -- 10.10 Further Reading -- 11. Outlook -- A. List of variables -- B. Physical Properties of Important Materials at 300K
Summary "Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics."--Jacket
Analysis chemie
chemistry
condenseren
condensation
elektronica
electronics
instrumentatie
instrumentation
optische instrumenten
optical instruments
nanotechnologie
nanotechnology
optica
optics
Chemistry (General)
Chemie (algemeen)
Bibliography Includes bibliographical references
Notes English
Print version record
In Springer e-books
Subject Silicon.
Silicon alloys -- Structure
Germanium.
Germanium alloys -- Structure
Quantum electronics.
Integrated circuits -- Design and construction.
Heterostructures.
Semiconductors.
Nanotechnology.
Silicones.
Silicon
Germanium
Semiconductors
Nanotechnology
Silicones
silicone.
silicon.
germanium.
semiconductor.
TECHNOLOGY & ENGINEERING -- Electronics -- Circuits -- Integrated.
TECHNOLOGY & ENGINEERING -- Electronics -- Circuits -- General.
Silicon alloys -- Structure.
Germanium.
Germanium alloys -- Structure.
Quantum electronics.
Integrated circuits -- Design and construction.
Heterostructures.
Semiconductors.
Nanotechnologie.
Circuits intégrés -- Conception et construction.
Silicium.
Électronique quantique.
Silicium -- Alliages -- Structure.
Germanium -- Alliages -- Structure.
Semiconducteurs.
Silicon.
Chimie.
Science des matériaux.
Silicones
Nanotechnology
Germanium
Heterostructures
Integrated circuits -- Design and construction
Quantum electronics
Semiconductors
Silicon
Form Electronic book
Author Paul, D. J
LC no. 2004116222
ISBN 9783540263821
3540263829
354022050X
9783540220503
6610337853
9786610337859
Other Titles Silicon-germanium heterostructure devices : basics and realisations