Description |
1 online resource (xii, 360 pages) : illustrations |
Series |
Nanoscience and technology, 1434-4904 |
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Nanoscience and technology. 1434-4904
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Contents |
Cover -- Title Page -- Preface -- Table of Contents -- 1. Introduction -- 1.1 Microelectronics and Optoelectronics -- 1.2 From Microelectronics to Nanoelectronics -- 1.3 Self ... ordering -- 1.4 Further Reading -- 2. Material Science -- 2.1 Growth and Preparation Methods (MBE, CVD, Implantation, Annealing) -- 2.2 Segregation and Diffusion of Dopants and Alloy Materials -- 2.3 Lattice Mismatch and its Implication on Critical Thickness and Interface Structure -- 2.4 Virtual Substrates and Strain Relaxation -- 2.5 Further Reading -- 3. Resumâe of Semiconductor Physics -- 3.1 Quantum Mechanics -- 3.2 The Band Structure of Semiconductors -- 3.3 The Concentration of Carriers in a Semiconductor -- 3.4 Electronic Transport in a Semiconductor -- 3.5 Low Dimensional Physics: Quantum Wires and Dots -- 3.6 Lattice Vibrations and Phonons -- 3.7 Optical Properties of Semiconductors -- 3.8 The Continuity Equations Including Recombination and Generation -- 3.9 Further Reading -- 4. Realisation of Potential Barriers -- 4.1 Depletion layer and built in voltage -- 4.2 d-Doping and n-i-p-i Structures -- 4.3 Heterointerfaces (type I, type II), Abruptness and Height of Barriers -- 4.4 Influence of Strain on Bandstructure -- 4.5 Band Alignment of Strained SiGe -- 4.6 Further Reading -- 5. Electronic Device Principles -- 5.1 The p-n Junction -- 5.2 The Silicon Bipolar Transistor -- 5.3 Metal Oxide Semiconductor Field Effect Transistors MOSFETs -- 5.4 Further Reading -- 6. Heterostructure Bipolar Transistors -- HBTs -- 6.1 Trade-off between current gain and speed -- 6.2 The High Speed SiGe HBT -- 6.3 The Linear Graded Profile -- 6.4 SiGe HBT Device Performance -- 6.5 Further Reading -- 7. Hetero Field Effect Transistors (HFETs) -- 7.1 Vertical Heterojunction MOSFETs -- 7.2 Strained-Si CMOS -- 7.3 Metal-Gated MOSFETs -- 7.4 Modulation Doped Field Effect Transistors (MODFETs) -- 7.5 Further Reading -- 8. Tunneling Phenomena -- 8.1 Tunnel Diodes -- 8.2 Resonant Tunnelling -- 8.3 Real Space Transfer (RST) Devices -- 8.4 Single Electron Transistors and Coulomb Blockade -- 8.5 Further Reading -- 9. Optoelectronics -- 9.1 Photonic Devices -- 9.2 The Quantum Cascade Laser -- 9.3 Further Reading -- 10. Integration -- 10.1 The CMOS Inverter and MOS Memory Circuits -- 10.2 Silicon Process Technology -- 10.3 CMOS -- 10.4 Heterolayer Integration Issues -- 10.5 Bipolar and HBT Fabrication Processes -- 10.6 BiCMOS -- 10.7 Strained-Si CMOS -- 10.8 The System on a Chip -- 10.9 Fault Tolerant Architectures -- 10.10 Further Reading -- 11. Outlook -- A. List of variables -- B. Physical Properties of Important Materials at 300K |
Summary |
"Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics."--Jacket |
Analysis |
chemie |
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chemistry |
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condenseren |
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condensation |
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elektronica |
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electronics |
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instrumentatie |
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instrumentation |
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optische instrumenten |
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optical instruments |
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nanotechnologie |
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nanotechnology |
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optica |
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optics |
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Chemistry (General) |
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Chemie (algemeen) |
Bibliography |
Includes bibliographical references |
Notes |
English |
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Print version record |
In |
Springer e-books |
Subject |
Silicon.
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Silicon alloys -- Structure
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Germanium.
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Germanium alloys -- Structure
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Quantum electronics.
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Integrated circuits -- Design and construction.
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Heterostructures.
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Semiconductors.
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Nanotechnology.
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Silicones.
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Silicon
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Germanium
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Semiconductors
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Nanotechnology
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Silicones
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silicone.
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silicon.
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germanium.
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semiconductor.
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TECHNOLOGY & ENGINEERING -- Electronics -- Circuits -- Integrated.
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TECHNOLOGY & ENGINEERING -- Electronics -- Circuits -- General.
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Silicon alloys -- Structure.
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Germanium.
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Germanium alloys -- Structure.
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Quantum electronics.
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Integrated circuits -- Design and construction.
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Heterostructures.
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Semiconductors.
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Nanotechnologie.
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Circuits intégrés -- Conception et construction.
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Silicium.
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Électronique quantique.
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Silicium -- Alliages -- Structure.
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Germanium -- Alliages -- Structure.
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Semiconducteurs.
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Silicon.
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Chimie.
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Science des matériaux.
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Silicones
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Nanotechnology
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Germanium
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Heterostructures
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Integrated circuits -- Design and construction
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Quantum electronics
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Semiconductors
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Silicon
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Form |
Electronic book
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Author |
Paul, D. J
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LC no. |
2004116222 |
ISBN |
9783540263821 |
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3540263829 |
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354022050X |
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9783540220503 |
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6610337853 |
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9786610337859 |
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