| Description |
1 online resource (262 pages) |
| Series |
Springer Theses |
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Springer theses.
|
| Contents |
Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix |
| Summary |
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors |
| Notes |
Doctoral Thesis accepted by Universidad Complutense de Madrid, Madrid, Spain |
|
Print version record |
| In |
Springer Nature eBook |
| Subject |
Infrared detectors -- Materials
|
|
Silicon compounds.
|
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Analytical chemistry.
|
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Chemistry.
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chemical analysis.
|
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chemistry.
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Infrared detectors -- Materials
|
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Silicon compounds
|
| Form |
Electronic book
|
| ISBN |
9783030638269 |
|
303063826X |
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