| Description |
1 online resource (xviii, 546 pages) : illustrations |
| Contents |
Preface; CONTENTS; Chapter 1 Crystal-Ambient Phase Equilibrium; 1.1 Equilibrium of Infinitely Large Phases; 1.2 Supersaturation; 1.3 Equilibrium of Finite Phases; 1.3.1 Equation of Laplace; 1.3.2 Equation of Thomson-Gibbs; 1.4 Equilibrium Shape of Crystals; 1.4.1 Theorem of Gibbs-Curie-Wulff; 1.4.2 Polar diagram of the surface energy; 1.4.3 Herring's formula; 1.4.4 Stability of crystal surfaces; 1.5 Atomistic Views on Crystal Growth; 1.5.1 Equilibrium of infinitely large crystal with the ambient phase -- The concept of half-crystal position |
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1.5.2 Equilibrium finite crystal-ambient phase -- The concept of mean separation work1.5.3 Equilibrium 2D crystal-ambient phase; 1.5.4 Equilibrium shape of crystals -- Atomistic approach; 1.5.5 Equilibrium vapor pressure of a 2D crystal on a foreign substrate; 1.6 Equilibrium Structure of Crystal Surfaces; 1.6.1 Classification of crystal surfaces; 1.6.2 Equilibrium structure of a step; 1.6.3 Equilibrium structure of F faces; 1.6.4 Kinetic roughness; Chapter 2 Nucleation; 2.1 Thermodynamics; 2.1.1 Homogeneous formation of nuclei; 2.1.2 Heterogeneous formation of 3D nuclei |
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2.1.3 Heterogeneous formation of elastically strained 3D nuclei2.1.4 Formation of 2D nuclei; 2.1.5 Mode of nucleation on a foreign substrate; 2.2 Rate of Nucleation; 2.2.1 General formulation; 2.2.2 The equilibrium state; 2.2.3 Steady state nucleation rate; 2.2.4 Nucleation of liquids from vapors; 2.2.5 Statistical contributions; 2.2.6 Nucleation from solutions and melts; 2.2.7 Rate of heterogeneous nucleation; 2.2.8 Rate of 2D nucleation; 2.2.9 Atomistic theory of nucleation; 2.2.10 Nonsteady state nucleation; 2.2.11 Mass crystallization and saturation nucleus density |
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2.2.12 Ostwald's step ruleChapter 3 Crystal Growth; 3.1 Normal Growth of Rough Crystal Faces; 3.2 Layer Growth of Flat Faces; 3.2.1 Rate of advance of steps; 3.2.2 Spiral growth of F faces; 3.2.3 Growth by 2D nucleation; 3.2.4 Influence of surface anisotropy -- growth of Si(001) vicinal surface; 3.2.5 Ehrlich-Schwoebel barrier and its consequences; 3.3 Kinematic Theory of Crystal Growth; 3.4 A Classical Experiment in Crystal Growth; Chapter 4 Epitaxial Growth; 4.1 Basic Concepts and Definitions; 4.2 Structure and Energy of Epitaxial Interfaces; 4.2.1 Boundary region |
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4.2.2 Models of epitaxial interfaces4.2.3 Misfit dislocations; 4.2.4 Frank-van der Merwe model of thin overlayer; 4.2.5 ID model with non-Hookean interatomic forces; 4.2.6 Van der merwe model of thick overgrowth; 4.2.7 Thickening overgrowth; 4.2.8 The Volterra approach; 4.3 Mechanism of Growth of Epitaxial Films; 4.3.1 Classification of the growth modes; 4.3.2 Experimental evidence; 4.3.3 General tendencies; 4.3.4 Thermodynamics of epitaxy; 4.3.5 Kinetics of growth of thin epitaxial films; 4.3.6 Surfactants in epitaxial growth; References; Index |
| Summary |
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Ehrlich |
| Bibliography |
Includes bibliographical references (pages 513-540) and index |
| Notes |
English |
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Print version record |
| Subject |
Crystal growth.
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SCIENCE -- Physics -- Crystallography.
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Science.
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Crystal growth
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Kristalgroei.
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| Form |
Electronic book
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| ISBN |
9789812796899 |
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9812796894 |
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9789812382450 |
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9812382453 |
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1281947911 |
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9781281947918 |
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9786611947910 |
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6611947914 |
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