| Description |
1 online resource (xxii, 451 pages) : illustrations |
| Contents |
Handbook of 3D Integration: 3D Process Technology; Contents; List of Contributors; 1 3D IC Integration Since 2008; 1.1 3D IC Nomenclature; 1.2 Process Standardization; 1.3 The Introduction of Interposers (2.5D); 1.4 The Foundries; 1.4.1 TSMC; 1.4.2 UMC; 1.4.3 GlobalFoundries; 1.5 Memory; 1.5.1 Samsung; 1.5.2 Micron; 1.5.3 Hynix; 1.6 The Assembly and Test Houses; 1.7 3D IC Application Roadmaps; References; 2 Key Applications and Market Trends for 3D Integration and Interposer Technologies; 2.1 Introduction; 2.2 Advanced Packaging Importance in the Semiconductor Industry is Growing |
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2.3 3D Integration-Focused Activities -- The Global IP Landscape2.4 Applications, Technology, and Market Trends; References; 3 Economic Drivers and Impediments for 2.5D/3D Integration; 3.1 3D Performance Advantages; 3.2 The Economics of Scaling; 3.3 The Cost of Future Scaling; 3.4 Cost Remains the Impediment to 2.5D and 3D Product Introduction; 3.4.1 Required Economics for Interposer Use in Mobile Products; 3.4.2 Silicon Interposer Pricing; References; 4 Interposer Technology; 4.1 Definition of 2.5D Interposers; 4.2 Interposer Drivers and Need; 4.3 Comparison of Interposer Materials |
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4.4 Silicon Interposers with TSV4.5 Lower Cost Interposers; 4.5.1 Glass Interposers; 4.5.1.1 Challenges in Glass Interposers; 4.5.1.2 Small-Pitch Through-Package Via Hole Formation and Ultrathin Glass Handling; 4.5.1.3 Metallization of Glass TPV; 4.5.1.4 Reliability of Copper TPVs in Glass Interposers; 4.5.1.5 Thermal Dissipation of Glass; 4.5.1.6 Glass Interposer Fabrication with TPV and RDL; 4.5.2 Low-CTE Organic Interposers; 4.5.3 Polycrystalline Silicon Interposer; 4.5.3.1 Polycrystalline Silicon Interposer Fabrication Process; 4.6 Interposer Technical and Manufacturing Challenges |
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4.7 Interposer Application Examples4.8 Conclusions; References; 5 TSV Formation Overview; 5.1 Introduction; 5.2 TSV Process Approaches; 5.2.1 TSV-Middle Approach; 5.2.2 Backside TSV-Last Approach; 5.2.3 Front-Side TSV-Last Approach; 5.3 TSV Fabrication Steps; 5.3.1 TSV Etching; 5.3.2 TSV Insulation; 5.3.3 TSV Metallization; 5.3.4 Overburden Removal by CMP; 5.3.5 TSV Anneal; 5.3.6 Temporary Carrier Wafer Bonding and Debonding; 5.3.7 Wafer Thinning and TSV Reveal; 5.4 Yield and Reliability; References; 6 TSV Unit Processes and Integration; 6.1 Introduction; 6.2 TSV Process Overview |
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6.3 TSV Unit Processes6.3.1 Etching; 6.3.2 Insulator Deposition with CVD; 6.3.3 Metal Liner/Barrier Deposition with PVD; 6.3.4 Via Filling by ECD of Copper; 6.3.5 CMP of Copper; 6.3.6 Temporary Bonding between Carrier and Device Wafer; 6.3.7 Wafer Backside Thinning; 6.3.8 Backside RDL; 6.3.9 Metrology, Inspection, and Defect Review; 6.4 Integration and Co-optimization of Unit Processes in Via Formation Sequence; 6.5 Co-optimization of Unit Processes in Backside Processing and Via-Reveal Flow; 6.6 Integration and Co-optimization of Unit Processes in Via-Last Flow |
| Notes |
Edition statement from running title area |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Online resource; title from PDF title page (Wiley, viewed August 5, 2014) |
| Subject |
Integrated circuits.
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Integrated circuits -- Design and construction.
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Semiconductor wafers.
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Three-dimensional imaging.
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Imaging, Three-Dimensional
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three-dimensional.
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TECHNOLOGY & ENGINEERING -- Mechanical.
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Integrated circuits
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Integrated circuits -- Design and construction
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Semiconductor wafers
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Three-dimensional imaging
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| Form |
Electronic book
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| Author |
Garrou, Philip E., editor
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Koyanagi, Mitsumasa, editor
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Ramm, Peter, editor
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| ISBN |
9783527670130 |
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3527670130 |
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1306705185 |
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9781306705189 |
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9783527670123 |
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3527670122 |
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9783527670116 |
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3527670114 |
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9783527670109 |
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3527670106 |
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3527334661 |
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9783527334667 |
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