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Author International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (13th : 2009 : Dölnsee-Schorfheide, Germany)

Title Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / edited by M. Kittler and H. Richter
Published Stafa-Zuerich, Switzerland : Trans Tech Publications, ©2010

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Description 1 online resource (xiv, 592 pages) : illustrations
Series Solid state phenomena, 1012-0394 ; v. 156-158
Diffusion and defect data. Pt. B, Solid state phenomena ; v. 156/158.
Contents Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon
Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms
Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects
Summary This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing inte
Bibliography Includes bibliographical references and index
Notes English
Print version record
Subject Semiconductors -- Congresses
Solid state electronics -- Congresses
TECHNOLOGY & ENGINEERING -- Engineering (General)
TECHNOLOGY & ENGINEERING -- Reference.
Semiconductors
Solid state electronics
Genre/Form Conference papers and proceedings
Form Electronic book
Author Kittler, Martin.
Richter, H., 1940-
ISBN 9783038133698
3038133698
Other Titles GADEST 2009