| Description |
1 online resource |
| Series |
Oxford science publications |
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Series on semiconductor science and technology ; 24 |
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Oxford science publications.
|
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Series on semiconductor science and technology ; 24.
|
| Contents |
Physical properties inside domain walls: Basic principles and scanning probe measurements / G. Catalan and N. Domingo -- Novel phases at domain walls / S. Farokhipoor, C. Magen, D. Rubi, and B. Noheda -- First-principles studies of structural domain walls / J. Íñiguez -- Fundamental properties of ferroelectric domain walls from Ginzburg-Landau models / P. Ondrejkovic, P. Marton, V. Stepkova, and J. Hlinka -- Introduction to domain boundary engineering / E. K. H. Salje and G. Lu -- Improper ferroelectric domain walls / D. M. Evans, Ch. Cochard, R. G. P. McQuaid, A. Cano, J. M. Gregg, and D. Meier -- Three-dimensional optical analysis of ferroelectric domain walls / A. Haußmann, L. M. Eng, and S. Cherifi-Hertel -- Turing patterns in ferroelectric domains: Nonlinear instabilities / J. F. Scott -- Photoelectric effects at domain walls / M.-M. Ynag and M. Alexe -- Transmission electron microscopy study of ferroelectric domain walls in BiFeO₃ thin films: Structures and switching dynamics / L. Li and X. Pan -- Nanoscale ferroelectric switching: A method to inject and study non-equilibrium domain walls / A. V. Ievlev, A. Tselev, R. Vasudevan, S. V. Kalinin, A. Morozovska, and P. Maksymovych -- Landau-Ginzburg-Devonshire Theory for domain wall conduction and observation of microwave conduction of domain walls / A. Tselev, A. V. Ievlev, R. Vasudevan, S. V. Kalinin, P. Maksymovych, and A. Morozovska -- Control of ferroelectric domain wall motion using electrodes with limited conductivity / P. V. Yudin and L. J. McGilly -- Multiscale simulations of domains in ferroelectrics / S. Liu, I. Grinberg, and A. M. Rappe -- Electronics based on domain walls / J. Seidel and R. Ramesh |
| Summary |
Technological evolution and revolution are both driven by the discovery of new functionalities, new materials and the design of yet smaller, faster, and more energy-efficient components. Progress is being made at a breathtaking pace, stimulated by the rapidly growing demand for more powerful and readily available information technology. High-speed internet and data-streaming, home automation, tablets and smartphones are now "necessities" for our everyday lives. Consumer expectations for progressively more data storage and exchange appear to be insatiable. Oxide electronics is a promising and relatively new field that has the potential to trigger major advances in information technology. Oxide interfaces are particularly intriguing. Here, low local symmetry combined with an increased susceptibility to external fields leads to unusual physical properties distinct from those of the homogeneous bulk. In this context, ferroic domain walls have attracted recent attention as a completely new type of oxide interface. In addition to their functional properties, such walls are spatially mobile and can be created, moved, and erased on demand. This unique degree of flexibility enables domain walls to take an active role in future devices and hold a great potential as multifunctional 2D systems for nanoelectronics. With domain walls as reconfigurable electronic 2D components, a new generation ofadaptive nano-technology and flexible circuitry becomes possible, that can be altered and upgraded throughout the lifetime of the device. Thus, what started out as fundamental research, at the limit of accessibility, is finally maturing into a promising concept for next-generationtechnology |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Online resource; title from PDF title page (EBSCO, viewed October 20, 2020) |
| Subject |
Domain structure.
|
|
Domain structure
|
| Form |
Electronic book
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| Author |
Seidel, Jan (Professor of Materials Science), author.
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Gregg, Marty, author.
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Ramesh, R. (Ramamoorthy), 1960- author.
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| ISBN |
9780192607416 |
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0192607413 |
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9780191895319 |
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0191895318 |
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