| Description |
1 online resource (xiv, 318 pages, 6 unnumbered pages of plates) : illustrations (some color) |
| Contents |
Porous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 3 Growth of SiC on Porous SiC Buffer Layers; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 7 HVPE Growth of GaN on Porous SiC Substrates; 8 Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers |
| Summary |
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins℗¡with an overview of porous wide-band-gap technology, and describes the℗¡underlying scientific basis for each application area.℗¡Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more |
| Bibliography |
Includes bibliographical references (pages 308-310) and index |
| Notes |
Print version record |
| Subject |
Gallium nitride.
|
|
Semiconductors.
|
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Silicon carbide.
|
| Form |
Electronic book
|
| Author |
Wood, Colin E. C.
|
|
Wiley InterScience (Online service)
|
| LC no. |
2007046623 |
| ISBN |
0470751819 |
|
0470751827 (electronic bk.) |
|
1281322458 |
|
9780470751817 |
|
9780470751824 (electronic bk.) |
|
9781281322456 |
|
(hbk. ; alk. paper) |
|
(hbk. ; alk. paper) |
|
