| Description |
1 online resource (x, 593 pages) : illustrations |
| Contents |
Front cover -- Contents -- Preface -- Contributors -- Part I. Technical Fundamentals and Challenges -- Chapter 1. Fundamentals and the Future of Semiconductor Device Technology -- Chapter 2. Challenge of III-V Materials Integration with Si Microelectronics -- Chapter 3. III-Nitrides on Si Substrates -- Chapter 4. New Technology Approaches -- Chapter 5. Group III-A Nitrides on Si: Stress and Microstructural Evolution -- Chapter 6. Direct Growth of III-V Devices on Silicon -- Chapter 7. Optoelectronic Devices Integrated on Si -- Chapter 8. Reliability of III-V Electronic Devices -- Chapter 9. In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems -- Chapter 10. X-Ray Characterization of Group III-Nitrides -- Chapter 11. Luminescence in GaN -- Chapter 12. GaN-Based Optical Devices on Silicon -- Chapter 13. Conventional III-V Materials and Devices on Silicon -- Chapter 14. III-V Solar Cells on Silicon -- Back cover |
| Summary |
Part I: Basic Physical and Chemical PropertiesFundamentals and the Future of Semiconductor Device Technology, M. MastroThe Challenge of III-V Materials Integration with Si Microelectronics, T. Li Part II: GaN and Related Alloys on Silicon Growth and Integration TechniquesIII-Nitrides on Si Substrate, J. Li, J.Y. Lin, H. Jiang, and N. SawakiNew Technology Approaches, A. Dadgar Part III: III-V Materials and Device Integration Processes with Si MicroelectronicsGroup III-A Nitrides on Si: Stress and Microstructural Evolution, S. Raghavan and J.M. RedwingDirect Growth of III-V Devices on Silicon, T. Kazior, K.J. Herrick, and J. LaRocheOptoelectronic Device Integrated on Si, Di Liang and J.E. BowersReliability of III-V Electronic Devices, A.A. Immorlica, Jr. Part IV: Defect and Properties Evaluation and CharacterizationIn Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems, R. Clos and A. KrostX-Ray Characterization of Group III-Nitrides, A. Krost and J. BläsingLuminescence in GaN, F. Bertram Part V: Device Structures and PropertiesGaN-Based Optical Devices on Silicon, A. DadgarThe Conventional III-V Materials and Devices on Silicon, E.Y. ChangIII-V Solar Cells on Silicon, S.A. Ringel and T.J. Grassman |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Print version record |
| Subject |
Compound semiconductors.
|
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TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
|
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TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
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Compound semiconductors
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| Form |
Electronic book
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| Author |
Li, Tingkai
|
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Mastro, Michael A., 1975-
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Dadgar, Armin
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| ISBN |
9781439815236 |
|
1439815232 |
|
