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Title Tunneling field effect transistor technology / Lining Zhang, Mansun Chan, editors
Published Cham : Springer, 2016
Online access available from:
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Description 1 online resource (ix, 213 pages) : illustrations (some color)
Contents Steep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation
Summary This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs
Notes Includes index
Online resource; title from PDF title page (SpringerLink, viewed April 14, 2016)
Subject Field-effect transistors.
Form Electronic book
Author Zhang, Lining, editor
Chan, Mansun, editor
ISBN 3319316532 (electronic bk)
9783319316536 (electronic bk)