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Book Cover
E-book
Author Kozlovskiĭ, V. V. (Vitaliĭ Vasilʹevich)

Title Radiation defect engineering / Kozlovski Vitali, Abrosimova Vera
Published New Jersey ; London : World Scientific, ©2005

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Description 1 online resource (viii, 253 pages) : illustrations
Series Selected topics in electronics and systems ; v. 37
Selected topics in electronics and systems ; v. 37.
Contents Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index
Summary The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials
Bibliography Includes bibliographical references and index
Notes English
Print version record
Subject Semiconductor doping.
Semiconductors -- Effect of radiation on.
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
Semiconductor doping
Semiconductors -- Effect of radiation on
Form Electronic book
Author Abrosimova, Vera
LC no. 2006283955
ISBN 9812703195
9789812703194
9789812565211
9812565213
1281899178
9781281899170
9786611899172
6611899170
Other Titles International journal of high speed electronics and systems
International journal of high speed electronics and systems
International journal of high speed electronics and systems
International journal of high speed electronics and systems