| Description |
1 online resource (143 pages) |
| Series |
NIMS Monographs |
|
NIMS monographs.
|
| Contents |
Intro -- Preface -- Contents -- 1 Introduction: Functions and Performances Governed by the Work Function -- 1.1 Why is the Work Function Important? -- 1.2 Contents of the Following Chapters -- References -- 2 What is the Work Function?: Definition and Factors that Determine the Work Function -- 2.1 Definition of the Work Function -- 2.2 Origin of the Work Function -- 2.3 Factors Determining the Work Function -- 2.4 Effect of Temperature on the Work Function -- 2.5 Inhomogeneity of the Work Function -- References -- 3 Modification of the Work Function -- 3.1 Mixing Elements |
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3.1.1 Substitutional Alloys -- 3.1.2 Interstitials (Metal Carbides and Nitrides) -- 3.1.3 Intermetallic Compounds (Ordered Alloys) -- 3.1.4 Two Elements with Miscibility Gap -- 3.2 Surface Termination -- 3.3 Adsorption or Segregation -- 3.4 Deposition -- References -- 4 Measurement of Work Function -- 4.1 Utilizing Electron Emission Current Measurement -- 4.1.1 Thermal Emission -- 4.1.2 Field Emission -- 4.1.3 Photoelectron Emission -- 4.2 Utilizing Electron Emission Spectroscopy -- 4.2.1 Photoelectron Emission Yield Spectroscopy (PYS) |
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4.2.2 Secondary Electron Cutoff Spectroscopy (UPS, XPS, AES ...) -- 4.3 Utilizing Contact Potential Difference Measurement -- 4.3.1 Kelvin Probe Method -- 4.3.2 Diode Method -- 4.4 Other Methods -- 4.4.1 Photoemission of Adsorbed Xenon (PAX) -- References -- 5 Modification of Band Alignment via Work Function Control -- 5.1 Ideal Band Alignment -- 5.2 Modification of Band Alignment -- References -- 6 Advanced Models for Practical Devices -- 6.1 S Parameter: Indicator of Nonideality -- 6.2 Origin of Nonideality -- 6.2.1 Metal-Induced Gap States (MIGS) Model |
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6.2.2 Disorder-Induced Gap States (DIGS) Model -- 6.2.3 Interface-Induced Gap States (IFIGS) Model -- 6.3 Charge Neutrality Level (CNL) and S Parameter -- 6.4 Modification of S Parameter by Inserting Insulator -- 6.5 Generalized CNL -- References -- 7 Utilization of Interface Potential -- 7.1 Control of Interface-Terminating Species -- 7.2 Insertion of a 1-ML-Thick Material -- References |
| Summary |
This book covers a wide range of topics on work function and band alignment, from the basics to practical examples. Work function and band alignment determine electric properties at the interface including surfaces, such as electron emission, the Schottky barrier height, and ohmic contact. Basic physics is used to systematically explain how to adjust and measure work function and how to modify the band alignment required for controlling work function in functional materials and electrodes. Methods introduced in the book help to improve device performance and to solve the problems of controlling the voltage and efficiency of devices in a great variety of applications, including electronic devices, optical devices such as displays, and energy devices such as solar cells and batteries. Understanding the technical methods necessary for controlling work function and band alignment can help to solve problems such as non-ohmic contact at source-electrode or drain-electrode interfaces in metal-oxide-silicon structures, which directly contributes to improving power saving and reducing heat generation in computers |
| Bibliography |
Includes bibliographical references |
| Notes |
Print version record |
| Subject |
Electrons -- Emission.
|
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Electron work function.
|
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Electron work function
|
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Electrons -- Emission
|
| Form |
Electronic book
|
| ISBN |
4431568980 |
|
9784431568988 |
|
