Title Novel three-state quantum dot gate field effect transistor : fabrication, modeling, and applications / Supriya Karmakar

Published New Delhi : Springer, 2014

Table of Contents
1.	Introduction: Multistate Devices and Logic					1
1.1.	Resonant Tunneling Diode (RTD)					2
1.2.	Resonant Tunneling Transistor (RTT)					2
1.3.	Quantum Dot Gate Field-Effect Transistor (QDGFET)					4
	References					5
2.	Quantum Dot Gate Field-Effect Transistor: Device Structures					7
2.1.	Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)					7
2.2.	Scaling Issues					7
2.3.	Quantum Dot					11
2.4.	Quantum Dot Gate Field-Effect Transistor (QDGFET)					11
2.4.1.	Device Structure					11
	References					18
3.	Quantum Dot Gate Field-Effect Transistors: Fabrication and Characterization					21
3.1.	Fabrication Methodology					21
3.1.1.	Ge0x-Cladded Ge Quantum Dots on Top of High-K Gate Dielectric					21
3.1.2.	QDGFET: SiOx-Cladded Si Quantum Dots on Silicon-on-Insulator Substrate					26
3.2.	Quantum Dot Gate Characterization					27
3.2.1.	Atomic Force Microscopy (AFM)					27
3.2.2.	Transmission Electron Microscopy (TEM)					29
3.3.	ZnS Layer Characterization					30
3.3.1.	X-Ray Diffraction					30
3.4.	Cross-Sectional High-Resolution Transmission Electron Micrograph (HRTEM)					31
3.5.	Electrical Characteristics					33
3.5.1.	GeOx-Cladded Ge Dots on Top of ZnS-ZnMgS Gate Insulator					33
3.5.2.	SiOx-Cladded Si Dots on Top of SiO2 Tunnel Insulator in SOI Substrate					35
3.5.3.	Thin Layer of Silicon Nitride on Top of SiOx-Cladded Si Quantum Dots in the Gate Region of FET					37
	References					39
4.	Quantum Dot Gate Field-Effect Transistors: Theory and Device Modeling					41
4.1.	Band Diagram of a MOSFET					41
4.2.	Theory of Operations of a MOSFET					42
4.2.1.	Accumulation					42
4.2.2.	Strong Accumulation					42
4.2.3.	Depletion					43
4.2.4.	Weak Inversion					44
4.2.5.	Strong Inversion					44
4.3.	Band Diagram of a QDGFET					45
4.4.	Theory of Operations of QDGFET					46
4.4.1.	SiOx-Cladded Si Quantum Dots on SiO2 Gate Insulator					46
4.4.2.	Ge0x-Cladded Ge Quantum Dots on ZnS-ZnMgS Gate Insulator					49
4.4.3.	Thin Layer of SiN on Top of SiOx-Cladded Si Dots on Top of SiO2 Gate Insulator					52
	References					54
5.	Quantum Dot Gate NMOS Inverter					55
5.1.	Introduction					55
5.2.	Conventional NMOS Inverter					55
5.3.	QDNMOS Inverter					56
5.3.1.	Device Structure					56
5.3.2.	Experimental Details for High-Resolution Transmission Electron Microscopy (HRTEM)					56
5.3.3.	Fabrication Techniques					58
	References					63
6.	Quantum Dot Gate Field-Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter					65
6.1.	QDGFET Circuit Model					65
6.2.	Inverter					67
6.2.1.	The Static CMOS Inverter					68
6.2.2.	Ratioed Logic: NMOS Inverter					69
6.3.	Ternary Inversion Operation					74
6.4.	Three-State Memory Cell					77
	References					80
7.	Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum Dot Gate Field-Effect Transistor (QDGFET)					81
7.1.	Introduction					81
7.2.	Analog-to-Digital (A/D) Conversion					81
7.2.1.	Existing A/D Conversion Method					82
7.2.2.	Variable Threshold Voltage Transistor					87
7.2.3.	Comparator					87
7.2.4.	QDGFET-Based Three-Bit Analog-to-Digital Converter (ADC)					89
7.3.	Three-Bit Digital-to-Analog Converter (DAC)					91
7.3.1.	Existing D/A Converter					91
7.3.2.	D/A Converter: Flash Architecture					94
7.4.	Noise Analysis					95
7.5.	Six-Bit Analog-to-Digital Converter (ADC)					97
7.5.1.	Comparator Design					97
7.5.2.	ADC Architecture					98
7.6.	Six-Bit Digital-to-Analog Converter (DAC)					100
7.7.	Reconstruction Circuit					100
7.8.	Noise Analysis					102
	References					103
8.	Performance in Sub-25-nm Range: Circuit Model, Ternary Logic Gates and ADC/DAC					105
8.1.	QDGFET Circuit Model for Sub-25-nm Range					105
8.2.	Scaling the Supply Voltage					105
8.3.	Ternary Logic Inverter					107
8.3.1.	Standard Ternary Logic Inverter (STI)					107
8.3.2.	Negative Ternary Logic Inverter (NTI) and Positive Ternary Logic Inverter (PTI)					108
8.4.	Two-Input Ternary Functions					112
8.4.1.	Ternary Logic NAND					113
8.4.2.	NAND as a Universal Logic Gate					116
8.4.3.	Ternary Logic NOR					118
8.4.4.	NOR as a Universal Logic Gate					119
8.4.5.	Ternary Logic XOR Gate					120
8.5.	Three-Bit Analog-to-Digital Converter (ADC)					123
8.6.	Three-Bit Digital-to-Analog Converter (DAC)					123
8.7.	Ternary Logic Decoder					124
8.7.1.	First Kind					124
8.7.2.	Second Kind					125
	References					126
9.	Conclusions					127
9.1.	Conclusions					127
	About the Author					129
	Index					131

Click on the following:
Springer eBooks
Springer Engineering eBooks

Copies

Description 1 online resource (xiv, 134 pages) : illustrations Contents Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions Summary The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated Bibliography Includes bibliographical references and index Includes bibliographical references Notes Online resource; title from PDF title page (SpringerLink, viewed December 3, 2013) Subject Field-effect transistors. TECHNOLOGY & ENGINEERING -- Mechanical. Ingénierie. Field-effect transistors Form Electronic book ISBN 9788132216353 8132216350 8132216342 9788132216346

  Permalink