| Description |
1 online resource (xv, 199 pages) : illustrations (some color) |
| Series |
Analog Circuits and Signal Processing, 1872-082X ; 122 |
|
Analog circuits and signal processing series ; 122. 1872-082X
|
| Contents |
Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope |
| Summary |
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; Explains the design of RF switches using the technologies presented and simulates switches; Verifies parameters and discusses feasibility of devices and switches |
| Bibliography |
Includes bibliographical references and index |
| Notes |
English |
|
Online resource; title from PDF title page (SpringerLink, viewed October 14, 2013) |
| Subject |
Metal oxide semiconductor field-effect transistors.
|
|
TECHNOLOGY & ENGINEERING -- Mechanical.
|
|
Metal oxide semiconductor field-effect transistors
|
| Form |
Electronic book
|
| Author |
Singh, Ghanshyam, author
|
| ISBN |
9783319011653 |
|
3319011650 |
|
3319011642 |
|
9783319011646 |
|
