| Description |
1 online resource (453 pages) |
| Contents |
Cover; Half Title; Title Page; Copyright Page; Dedication; Table of Contents; Preface; Acknowledgment; Editor; Contributors; Section I: Nanoscale Transistors; 1: Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective; 2: Variability in Nanoscale Technology and EdDC MOS Transistor; 3: Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices; Section II: Novel MOSFET Structures; 4: U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor: Structures and Characteristics |
|
5: Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor6: Modeling of Double-Gate MOSFETs; Section III: Modeling of Tunnel FETs; 7: TFETs for Analog Applications; 8: Dual Metal-Double Gate Doping-Less TFET: Design and Investigations; Section IV: Graphene and Carbon Nanotube Transistors and Applications; 9: Modeling of Graphene Plasmonic Terahertz Devices; 10: Analysis of CNTFET for SRAM Cell Design; 11: Design of Ternary Logic Circuits Using CNFETs; Section V: Modeling of Emerging Non-Silicon Transistors |
|
12: Different Analytical Models for Organic Thin-Film Transistors: Overview and Outlook13: A Fundamental Overview of High Electron Mobility Transistor and Its Applications; Section VI: Emerging Nonvolatile Memory Devices and Applications; 14: Spintronic-Based Memory and Logic Devices; 15: Fundamentals, Modeling, and Application of Magnetic Tunnel Junctions; 16: RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications; 17: Evaluation of Nanoscale Memristor Device for Analog and Digital Application; Index |
| Notes |
Print version record |
| Form |
Electronic book
|
| ISBN |
9781351670227 |
|
1351670220 |
|
