| Description |
1 online resource (339 p.) |
| Contents |
Cover -- Half Title -- Title Page -- Copyright Page -- Table of Contents -- Preface -- Author -- Chapter 1 Introduction -- 1.1 Fin Field-Effect Transistors -- 1.2 Overview of MOSFET Devices for Integrated Circuit Manufacturing -- 1.2.1 Challenges of MOSFET Scaling at the Nanometer Node -- 1.2.1.1 Leakage Current in Short Channel MOSFETs -- 1.2.1.2 Variability in MOSFETs -- 1.2.2 Physics of MOSFET Scaling Challenges -- 1.3 Alternative Device Concepts -- 1.3.1 Undoped or Lightly Doped Channel MOSFETs -- 1.3.1.1 Deeply Depleted Channel MOSFETs -- 1.3.1.2 Buried-Halo MOSFETs |
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1.3.2 Thin-Body Field-Effect Transistors -- 1.3.2.1 Single-Gate Ultrathin-Body Field-Effect Transistors -- 1.3.2.2 Multiple-Gate Field-Effect Transistors -- 1.4 FinFET Devices for VLSI Circuits and Systems -- 1.5 A Brief History of FinFET Devices -- 1.6 Summary -- References -- Chapter 2 Fundamentals of Semiconductor Physics -- 2.1 Introduction -- 2.2 Semiconductor Physics -- 2.2.1 Energy Band Model -- 2.2.2 Carrier Statistics -- 2.2.3 Intrinsic Semiconductors -- 2.2.3.1 Intrinsic Carrier Concentration -- 2.2.3.2 Effective Mass of Electrons and Holes -- 2.2.4 Extrinsic Semiconductors |
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2.2.4.1 Fermi Level in Extrinsic Semiconductor -- 2.2.4.2 Fermi Level in Degenerately Doped Semiconductor -- 2.2.4.3 Electrostatic Potential in Semiconductor and Carrier Concentration -- 2.2.4.4 Quasi-Fermi Level -- 2.2.5 Carrier Transport in Semiconductors -- 2.2.5.1 Drift of Carriers: Carrier Motion in Electric Field -- 2.2.5.2 Diffusion of Carriers -- 2.2.6 Generation-Recombination of Carrier -- 2.2.6.1 Injection Level -- 2.2.6.2 Recombination Processes -- 2.2.7 Basic Semiconductor Equations -- 2.2.7.1 Poisson's Equation -- 2.2.7.2 Transport Equations -- 2.2.7.3 Continuity Equations |
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2.3 Theory of n-Type and p-Type Semiconductors in Contact -- 2.3.1 Basic Features of pn-Junctions -- 2.3.2 Built-Iin Potential -- 2.3.3 Step Junctions -- 2.3.3.1 Electrostatics -- 2.3.4 pn-Junctions under External Bias -- 2.3.4.1 One-Sided Step Junction -- 2.3.5 Carrier Transport Across pn-Junctions -- 2.3.5.1 Relationship between Minority Carrier Density and Junction Potential -- 2.3.6 pn-Junctions I -- V Characteristics -- 2.3.6.1 Temperature Dependence of pn-Junction Leakage Current -- 2.3.6.2 Limitations of pn-Junction Current Equation -- 2.3.6.3 Bulk Resistance |
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2.3.6.4 Junction Breakdown Voltage -- 2.3.7 pn-Junction Dynamic Behavior -- 2.3.7.1 Junction Capacitance -- 2.3.7.2 Diffusion Capacitance -- 2.3.7.3 Small-Signal Conductance -- 2.3.8 pn-Junction Equivalent Circuit -- 2.4 Summary -- References -- Chapter 3 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System -- 3.1 Introduction -- 3.2 Multigate MOS Capacitors at Equilibrium -- 3.2.1 Properties of Isolated Metal, Oxide, and Semiconductor Materials -- 3.2.1.1 Workfunction -- 3.2.2 Metal, Oxide, and Semiconductor Materials in Contact Forming MOS Systems |
| Notes |
Description based upon print version of record |
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3.2.2.1 MOS Systems with MG Workfunction at Silicon Band-Edges |
| Form |
Electronic book
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| ISBN |
9780429998096 |
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0429998090 |
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